2SB1024

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1024 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@ IC= -3A ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD1414 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature Storage Temperature 20 150 -55~150 ℃ ℃ VALUE -100 -80 -5 -4 -6 -0.3 2 W UNIT V V V A A A isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -10mA ; IB= 0 IC= -3A; IB= -6mA IC= -3A; IB= -6mA VCB= -100V; IE= 0 VEB= -5V; IC= 0 IC= -1A; VCE= -2V IC= -3A; VCE= -2V 2000 1000 MIN -80 TYP. 2SB1024 MAX UNIT V -1.5 -2.0 -20 -2.5 V V μA mA Switching Times Turn-on Time Storage Time Fall Time VCC≈ -30V, RL= 10Ω, IC= -3A; IB1= -IB2= -6mA, 0.15 0.80 0.40 μs μs μs ton tstg tf isc Website：www.iscsemi.cn 2