2SB1033

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1033 DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -3 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob PARAMETER Base-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz 60 12 100 MIN -60 -60 -5 TYP. 2SB1033 MAX UNIT V V V -1.5 -1.5 -10 -10 320 V V μA μA MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1033 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3