2SB1052

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1052 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -6 -2 -4 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICES ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA; IB=0 IC=-2A ;IB=-0.2A IC=-1A ; VCE=-4V VCE=-60V; VBE=0 VCE=-30V; IB=0 VEB=-6V; IC=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V 35 40 MIN -60 2SB1052 TYP. MAX UNIT V -2.0 -1.2 -0.2 -0.3 -1.0 V V mA mA mA 250 Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1A ;IB1=-IB2=-0.1A 0.1 1.5 0.3 μs μs μs hFE-2 Classifications R 40-90 Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1052 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3