2SB1065

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION ・With TO-126 package ・Complement to type 2SD1506 ・Low collector saturation voltage APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -5 -3 -4.5 10 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1065 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 IC=-50μA ,IE=0 IE=-50μA ,IC=0 -50 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage -60 V Emitter-base breakdown voltage -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V μA μA ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 hFE COB DC current gain IC=-0.5A ; VCE=-3V IE=0 ; VCB=-10V,f=1MHz 56 390 Output capacitance 50 pF fT Transition frequency IC=-0.5A ; VCE=-5V 70 MHz hFE Classifications N 56-120 P 82-180 Q 120-270 R 180-390 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1065 Fig.2 Outline dimensions 3