2SB1079

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1079 DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE -100 -100 -7 -20 -30 -3 100 150 -55~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEO hFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Collector Cutoff current DC Current Gain CONDITIONS IC= -200mA, RBE= ∞ IC= -25mA, RBE= ∞ IC= -0.1mA ,IE= 0 IE= -50mA ,IC= 0 IC= -10A ,IB= -20mA IC= -20A ,IB= -200mA IC= -10A ,IB= -20mA IC= -20A ,IB= -200mA VCB= -100V, IE= 0 VCE= -80V, RBE= ∞ IC= -10A ; VCE= -3V 1000 MIN -100 -100 -100 -7 TYP. 2SB1079 MAX UNIT V V V V -2.0 -3.0 -2.5 -3.5 -0.1 -1.0 V V V V mA mA Switching Times ton tstg Turn-on Time IC= -10 A, IB1 = -IB2 = -20 mA; Storage Time 3.5 0.6 μs μs isc Website：www.iscsemi.cn