2SB1085

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -1.5 -3.0 20 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ,IB=0 IC=-50μA ,IE=0 IE=-50μA ,IC=0 IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-0.1A ; VCE=-5V 60 30 50 MIN -120 -120 -5 TYP. 2SB1085 MAX UNIT V V V -2.0 -1.5 -1.0 -1.0 320 V V μA μA pF MHz hFE classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1085 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3