2SB1086

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563 ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1086 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -1.5 -3.0 10 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1086 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.0A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1.0A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-0.1A ; VCE=-5V 56 390 fT Transition frequency IC=-0.1A ; VCE=-5V 50 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1086 Fig.2 Outline dimensions 3