Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2SB1086A
・
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 -3.0 10 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SB1086A
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;IB=0
-160
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50μA ;IE=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-1.0A ;IB=-0.1A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-1.0A ;IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
μA
hFE
DC current gain
IC=-0.1A ; VCE=-5V
56
270
fT
Transition frequency
IC=-0.1A ; VCE=-5V
50
MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
30
pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1086A
Fig.2 Outline dimensions
3
很抱歉,暂时无法提供与“2SB1086A”相匹配的价格&库存,您可以联系我们找货
免费人工找货