2SB1087

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1087 DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -5 1.5 W UNIT V V V A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1087 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA, IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-2mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-2mA -2.0 V μA ICBO Collector cut-off current VCB=-100V, IE=0 1 IEBO Emitter cut-off current VEB=-5V; IC=0 -3 mA hFE-1 DC current gain IC=-2A , VCE=-5V 2000 20000 hFE-2 DC current gain IC=-5A , VCE=-5V 500 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1087 Fig.2 Outline dimensions 3