2SB1097

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1097 DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SD1588 APPLICATIONS ・For low frequency power amplifier and low speed switching applications PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -80 -60 -5 -7 2.0 W UNIT V V V A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-30mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-1V 40 MIN -60 -80 -5 2SB1097 TYP. MAX UNIT V V V -0.5 -1.5 -10 -10 200 V V μA μA hFE Classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1097 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3