2SB1098

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1098 DESCRIPTION ・With TO-220F package ・Complement to type 2SD1589 ・DARLINGTON ・High DC current gain APPLICATIONS ・Low speed switching industrial use ・Low frequency power amplifier PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS MAX -100 -100 -7 -5 -8 -0.5 2 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-3A; IB=-3mA IC=-3A; IB=-3mA VCB=-100V ;IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-2V IC=-5A ; VCE=-2V 2000 500 MIN 2SB1098 TYP. MAX -1.5 -2.0 -1 -3 15000 UNIT V V μA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A ;IB1=-IB2=-3mA RL=17Ω;VCC=-50V; 0.5 1 1 μs μs μs hFE-1 Classifications R 2000-5000 O 3000-7000 Y 5000-15000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1098 Fig.2 Outline dimensions 3