2SB1103

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1603 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -7 -8 -12 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE=∞ IE=-50mA, IC=0 IC=-4A ,IB=-8mA IC=-8A ,IB=-80mA IC=-4A ,IB=-8mA IC=-8A ,IB=-80mA VCB=-60V, IE=0 VCE=-50V, RBE=∞ IC=-4A ; VCE=-3V ID=8A 1000 MIN -60 -7 2SB1103 TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 V V V V μA μA 3.0 V Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A ,IB1=-IB2=-8mA 0.5 3.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1103 Fig.2 Outline dimensions 3