2SB1106

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1106 DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -6 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE=∞ IE=-50mA, IC=0 IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA VCB=-120V, IE=0 VCE=-100V, RBE=∞ IC=-3A ; VCE=-3V ID=-6A 1000 MIN -120 -7 2SB1106 TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 V V V V μA μA 3.0 V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1106 Fig.2 Outline dimensions 3