2SB1135

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1668 ・Low collector saturation voltage ・Wide ASO APPLICATIONS ・Relay drivers ・High speed inverters;converters ・General high current switching application PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION 2SB1135 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector MAX -60 -50 -6 -7 -12 -0.5 2 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 10 MIN -50 -60 -6 2SB1135 TYP. MAX UNIT V V V -0.4 -100 -100 280 V μA μA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A IB1=-IB2=-0.2A 0.2 0.7 0.1 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1135 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1135 4