2SB1145

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1145 DESCRIPTION ・With TO-220F package ・High DC current gain. ・DARLINGTON ・Low collector saturation voltage APPLICATIONS ・For high current driver and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -3 -5 20 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=-100μA; IE=0 MIN TYP. 2SB1145 MAX UNIT V(BR)CBO Collector-base breakdown voltage -120 V V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1.5A ; IB=-3mA -2.0 V μA ICBO Collector cut-off current VCB=-120V;IE=0 -50 IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-1.5A ; VCE=-3V 2000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1145 Fig.2 Outline dimensions 3