2SB1151

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SD1691 ・Low saturation voltage ・Large current ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA APPLICATIONS ・DC-DC converter ・Driver of solenoid or motor PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SB1151 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -5 -8 -1 1.3 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-2.0A ;IB=-0.2A IC=-2.0A ;IB=-0.2A VCB=-50V; IE=0 VEB=-7V; IC=0 IC=-0.1A ; VCE=-1V IC=-2A ; VCE=-1V IC=-5A ; VCE=-2V 60 100 50 MIN TYP. 2SB1151 MAX -0.3 -1.2 -10 -10 UNIT V V μA μA 400 Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A RL=5.0Ω;VCC≈10V 0.15 0.78 0.18 1.0 2.5 1.0 μs μs μs hFE-2 Classifications M 100-200 L 160-320 K 200-400 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1151 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1151 4