2SB1154

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1154 DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -10 -20 70 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE-1 hFE -2 hFE -3 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-6A ;IB=-0.3A IC=-10A ;IB=-1A IC=-6A ;IB=-0.3A IC=-10A ;IB=-1A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-6A ; VCE=-2V IC=-0.5A ; VCE=-10V;f=10MHz 45 90 30 30 MIN -80 2SB1154 TYP. MAX UNIT V -0.5 -1.5 -1.5 -2.5 -10 -50 V V V V μA μA 260 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-6A ;IB1=-IB2=-0.6A VCC=-50V 0.5 1.0 0.2 μs μs μs hFE-2 classifications Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1154 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1154 4