2SB1217

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @ TC=25℃ VALUE -60 -60 -7 -3 -5 -0.5 10 UNIT V V V A A A PC Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range 1.3 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1217 TYP. MAX UNIT VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A B -0.3 V Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A B -1.2 V μA μA Collector Cutoff Current VCB= -60V; IE= 0 -10 IEBO hFE-1 Emitter Cutoff Current VEB= -7V; IC= 0 IC= -0.2A ; VCE= -2V 60 -10 DC Current Gain hFE-2 DC Current Gain IC= -0.6A ; VCE= -2V 100 400 hFE-3 DC Current Gain IC= -2.0A ; VCE= -2V 50 Switching Times μs μs μs ton tstg tf Turn-On Time IC= -1.0A; IB1= -IB2= -0.1A; RL= 10Ω; VCC≈ -10V 0.5 Storage Time 2.0 Fall Time 0.5 hFE-2 Classifications M 100-200 L 160-320 K 200-400 isc Website：www.iscsemi.cn 2