2SB1226

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1226 DESCRIPTION ・With TO-220F package ・Complement to type 2SD1828 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -110 -100 -6 -3 -5 20 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE=∞ IC=-1.5A ; IB=-3mA IC=-1.5A ; IB=-3mA VCB=-80V;IE=0 VEB=-5V;IC=0 IC=-1.5A ; VCE=-3V IC=-1.5A ; VCE=-5V 1500 MIN -110 -100 2SB1226 TYP. MAX UNIT V V -1.0 -1.5 -2.0 -0.1 -3.0 V V mA mA 4000 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=500IB1=-500IB2=-1A VCC=-50V ,RL=50Ω 0.7 2.4 1.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1226 Fig.2 Outline dimensions 3