2SB1227

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION ・With TO-220F package ・Complement to type 2SD1829 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -110 -100 -6 -5 -8 25 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1227 MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 IC=-50mA; RBE=∞ -110 V V(BR)CEO Collector-emitter breakdown voltage -100 V VCEsat Collector-emitter saturation voltage IC=-2.5A ; IB=-5mA -1.0 -1.5 V VBEsat Base-emitter saturation voltage IC=-2.5A ; IB=-5mA -2.0 V ICBO Collector cut-off current VCB=-80V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-2.5A ; VCE=-3V 1500 4000 fT Transition frequency IC=-2.5A ; VCE=-5V 20 MHz Switching times μs μs μs ton Turn-on time IC=500IB1=-500IB2=-2A VCC=-50V ,RL=25Ω 0.7 tstg Storage time 1.3 tf Fall time 1.5 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1227 Fig.2 Outline dimensions 3