2SB1255

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895 APPLICATIONS ・Power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -140 -8 -15 -12 100 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ; IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=0.5A ; VCE=-10V;f=1MHz 2000 5000 20 30000 MHz MIN -140 -2.5 -3.0 -100 -100 -100 TYP. MAX UNIT V V V μA μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-7A; VCC=-50V IB1=-IB2=-7mA 1.0 1.5 1.2 μs μs μs hFE-2 classifications Q 5000-15000 P 8000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1255 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3