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2SB1255

2SB1255

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SB1255 - Silicon PNP Darlington Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1255 数据手册
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895 APPLICATIONS ・Power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -140 -8 -15 -12 100 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ; IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=0.5A ; VCE=-10V;f=1MHz 2000 5000 20 30000 MHz MIN -140 -2.5 -3.0 -100 -100 -100 TYP. MAX UNIT V V V μA μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-7A; VCC=-50V IB1=-IB2=-7mA 1.0 1.5 1.2 μs μs μs hFE-2 classifications Q 5000-15000 P 8000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1255 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3
2SB1255
物料型号: - 型号:2SB1255

器件简介: - 2SB1255是一款硅PNP达林顿功率晶体管,采用TO-3PFa封装,适合90W的高保真输出,具有高转发电流传输比(hFE)和低集电极-发射极饱和电压。

引脚分配: - 引脚1:基极(Base) - 引脚2:宽集电极(w Collector) - 引脚3:发射极(Emitter)

参数特性: - 集电极-基极电压(VCBO):-160V,开路发射极 - 集电极-发射极电压(VCEO):-140V,开路基极 - 发射极-基极电压(VEBO):-8V,开路集电极 - 集电极电流(Ic):-15A - 集电极峰值电流(IcP):-12A - 集电极功耗(Pc):100W,Tc=25°C - 结温(Tj):150°C - 存储温度(Tstg):-55~150°C

功能详解: - 2SB1255在Tj=25℃的条件下,具有以下特性: - VCEO:-140V,IC=-30mA,IB=0 - VCEsat:-2.5V,IC=-7A,IB=-7mA - VBEsat:-3.0V,IC=-7A,IB=-7mA - ICBO:-100μA,VCB=-160V,IE=0 - ICEO:-100μA,VCE=-140V,IB=0 - IEBO:-100μA,VEB=-5V,IC=0 - hFE-1:2000(IC=-1A,VCE=-5V) - hFE-2:5000至30000(IC=-7A,VCE=-5V) - fT:20MHz(IC=0.5A,VCE=-10V,f=1MHz)

应用信息: - 2SB1255适用于功率放大。

封装信息: - 封装类型为TO-3PFa,文档中提供了简化外形图和符号。
2SB1255 价格&库存

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