2SB1258

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -6 -6 -10 -1 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A; IB=-6mA IC=-3A; IB=-6mA VCB=-100V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-2V IE=0.2A ; VCE=-12V IE=0; f=1MHz;VCB=-10V 1000 MIN -100 2SB1258 TYP. MAX UNIT V -1.5 -2.0 -10 -10 V V μA μA 100 100 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A; IB1=-IB2=-6mA VCC=-30V ,RL=10Ω 0.6 1.6 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1258 Fig.2 Outline dimensions 3