2SB1273

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1273 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -6 -3 -8 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=-5mA ,RBE=∞ MIN TYP. 2SB1273 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage -60 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=-1mA ,IE=0 IE=-1mA ,IC=0 -60 V Emitter-base breakdown voltage -6 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.4 -1.0 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -0.8 -1.0 V μA μA ICBO Collector cut-off current VCB=-40V; IE=0 -100 IEBO Emitter cut-off current VEB=-4V; IC=0 -100 hFE-1 hFE-2 DC current gain IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V 70 280 DC current gain 20 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 60 pF fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1273 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3