2SB1286

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1286 DESCRIPTION ·High DC Current Gain:hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1646 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC ICM Collector Current-Continuous -2 A Collector Current-Peak Collector Power Dissipation TC=25℃ Junction Temperature -3 A PC 25 W ℃ ℃ Tj 150 Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1286 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA, IB= 0 B -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA, IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA B -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -3 mA hFE DC Current Gain IC= -1A; VCE= -2V 1000 10000 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 35 pF isc Website：www.iscsemi.cn