2SB1287

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1287 DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1765 ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -8 -2 -3 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1287 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 IC=-50μA; IE=0 -100 V V(BR)CBO Collector-base breakdown voltage -100 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V μA ICBO Collector cut-off current VCB=-100V; IE=0 -10 IEBO Emitter cut-off current VEB=-7V; IC=0 -3.0 mA hFE DC current gain IC=-1A ; VCE=-2V 1000 10000 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 35 pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1287 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3