2SB1292

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1292 DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation APPLICATIONS ・For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -5 -5 -10 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA , IB=0 IC=-50μA , IE=0 IE=-50μA , IC=0 IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-60V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V ,f=1MHz 100 12 MIN -60 -60 -5 2SB1292 TYP. MAX UNIT V V V -1.5 -1.5 -10 -10 320 V V μA μA MHz pF 150 hFE Classifications E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon Power Transistors PACKAGE OUTLINE 2SB1292 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3