2SB1293

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1293 DESCRIPTION ·High Collector Current:: IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1896 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature -10 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -1mA; IB= 0 B 2SB1293 MIN -100 -100 -5 TYP. MAX UNIT V V V IC= -50μA; IE= 0 IE= -50μA; IC= 0 IC= -3A; IB= -0.3A B -1.0 -1.5 -10 -10 60 120 12 320 V V μA μA IC= -3A; IB= -0.3A B VCB= -100V; IE= 0 VEB= -4V; IC= 0 IC= -1A; VCE= -5V IE=0; VCB= -10V; f= 1MHz IE= 0.5A; VCE= -5V pF MHz hFE Classifications D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2