2SB1335

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1335 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -6 -4 30 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50μA; IE=0 IE=-50μA; IC=0 IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A; VCE=-5V f=1MHz ; VCB=-10V 60 MIN -60 -80 -6 2SB1335 TYP. MAX UNIT V V V -1.0 -1.5 -10 -10 320 12 100 V V μA μA MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1335 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3