2SB1345

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1345 DESCRIPTION ·With TO-247 package ·Complement to type 2SD2062 ·Low collector saturation voltage APPLICATIONS ·For power drvier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and DESCRIPTION · Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -7 80 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1345 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 IC=-50μA; IE=0 IE=-50μA; IC=0 -80 V V(BR)CBO Collector-base breakdown voltage -100 V V(BR)EBO Emitter-base breakdown voltage -5 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.5 V μA μA ICBO Collector cut-off current VCB=-100V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE DC current gain IC=-1A ; VCE=-5V 60 320 fT Transition frequency IC=-0.5A ; VCE=-10V 12 MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1345 Fig.2 Outline dimensions 3