2SB1353

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1353 DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033 APPLICATIONS ·Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ -1.5 A 1.8 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1353 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -2.0 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Cain IC= -0.1A ; VCE= -5V 60 320 fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -5V 50 MHz hFE Classifications D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2