2SB1361

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2052 APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ -15 A 100 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1361 TYP. MAX UNIT VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A B -2.0 V Base -Emitter On Voltage IC= -7A; VCE= -5V -1.8 V μA μA Collector Cutoff Current VCB= -150V; IE= 0 -50 IEBO hFE-1 Emitter Cutoff Current VEB= -3V; IC= 0 IC= -20mA; VCE= -5V 20 -50 DC Current Gain hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-3 DC Current Gain IC= -7A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz 15 MHz COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 270 pF hFE-2Classifications Q 60-120 S 80-160 P 100-200 isc Website：www.iscsemi.cn 2