2SB1362

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1362 DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD2053 APPLICATIONS ・For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -9 -15 100 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1362 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -2.0 V VBE Base-emitter on voltage IC=-7A;VCE=-5V -1.8 V μA μA ICBO Collector cut-off current VCB=-150V; IE=0 -50 IEBO Emitter cut-off current VEB=-5V; IC=0 -50 hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 60 200 hFE-3 DC current gain IC=-7A ; VCE=-5V 15 fT Transition frequency IC=-0.5A ; VCE=-5V 15 MHz COB Collector output capacitance f=1MHz;VCB=-10V 270 pF hFE-2 Classifications Q 60-120 P 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1362 Fig.2 outline dimensions 3