2SB1367

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1367 DESCRIPTION ・With TO-220F package ・Complement to type 2SD2059 ・Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A ・Collector power dissipation: PC=30W(TC=25℃) APPLICATIONS ・With general purpose applications PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -5 -0.5 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 40 20 MIN -100 2SB1367 TYP. MAX UNIT V -2.0 -1.5 -0.1 -1.0 240 V V mA mA 5.0 270 MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1367 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1367 4