2SB1368

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1368 DESCRIPTION ・With TO-220F package ・Complement to type 2SD2060 ・Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 -0.4 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-3A ;IB=-0.3A IC=-3A;VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=10V 40 15 MIN -80 2SB1368 TYP. MAX UNIT V -1.0 -1.0 -1.7 -1.5 -30 -100 240 V V μA μA 9.0 130 MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1368 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1368 4