2SB1369

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1369 DESCRIPTION ・With TO-220 package ・High collector power dissipation ・High current capability APPLICATIONS ・For general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -5 -3 -6 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1369 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 IC=-50μA; IE=0 IE=-50μA; IC=0 -60 V V(BR)CBO Collector-base breakdown voltage -60 V V(BR)EBO Emitter-base breakdown voltage -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V μA μA ICBO Collector cut-off current VCB=-60V; IE=0 -10 IEBO Emitter cut-off current VEB=-4V; IC=0 -10 hFE DC current gain IC=-0.5A ; VCE=-5V 100 320 fT Transition frequency IC=-0.5A; VCE=-5V 15 MHz COB Collector output capacitance f=1MHz ; VCB=10V 80 pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1369 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3