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2SB1370

2SB1370

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SB1370 - isc Silicon PNP Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SB1370 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ -6 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -1mA; IB= 0 B 2SB1370 MIN -60 -60 -5 TYP. MAX UNIT V V V IC= -50μA; IE= 0 IE= -50μA; IC= 0 IC= -2A; IB= -0.2A B -1.5 -1.5 -10 -10 100 80 15 320 V V μA μA IC= -2A; IB= -0.2A B VCB= -60V; IE= 0 VEB= -4V; IC= 0 IC= -0.5A; VCE= -5V IE= 0; VCB= -10V; ftest= 1MHz IC=-0.5A; VCE= -5V; ftest= 5MHz pF MHz hFE Classifications E 100-200 F 160-320 isc Website:www.iscsemi.cn 2
2SB1370 价格&库存

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