INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB1370
DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak Collector Power Dissipation @ Ta=25℃
-6
A
2 W
PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -1mA; IB= 0
B
2SB1370
MIN -60 -60 -5
TYP.
MAX
UNIT V V V
IC= -50μA; IE= 0 IE= -50μA; IC= 0 IC= -2A; IB= -0.2A
B
-1.5 -1.5 -10 -10 100 80 15 320
V V μA μA
IC= -2A; IB= -0.2A
B
VCB= -60V; IE= 0 VEB= -4V; IC= 0 IC= -0.5A; VCE= -5V IE= 0; VCB= -10V; ftest= 1MHz IC=-0.5A; VCE= -5V; ftest= 5MHz
pF MHz
hFE Classifications E 100-200 F 160-320
isc Website:www.iscsemi.cn
2
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