2SB1375

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・Audio frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -3 -0.5 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-2A ;IB=-0.2A IC=-0.5A;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-2A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0; f=1MHz;VCB=-10V 100 15 9 MIN -60 2SB1375 TYP. MAX UNIT V -1.0 -0.75 -1.5 -1.0 -10 -10 320 V V μA μA MHz pF 50 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1375 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1375 4