2SB1382

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1382 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) ·Complement to Type 2SD2082 B APPLICATIONS ·Designed for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO IC Emitter-Base Voltage -6 V Collector Current-Continuous -16 A ICM Collector Current-Peak -26 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature -1 A PC 75 W ℃ ℃ TJ Tstg 150 Storage Temperature -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1382 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -120 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= -8A; IB= -16mA B -1.5 V Base-Emitter Saturation Voltage IC= -8A; IB= -16mA B -2.5 V μA Collector Cutoff Current VCB= -120V ; IE= 0 VEB= -6V; IC= 0 -10 Emitter Cutoff Current -10 mA hFE DC Current Gain IC= -8A ; VCE= -4V 2000 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz IE= 1A ; VCE= -12V 350 pF fT Current-Gain—Bandwidth Product 50 MHz Switching Times ton tstg tf Turn-on Time VCC= -40V, RL= 5Ω, IC= -8A; IB1= -IB2= -16mA, 0.8 μs μs μs Storage Time 1.8 Fall Time 1.0 isc Website：www.iscsemi.cn 2