2SB1389

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1389 DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -4 -8 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1389 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=-25mA; RBE=∞ IC=-100μA; IE=0 MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage -60 V V(BR)CBO Collector-base breakdown voltage -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-2A ;IB=-4mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-4A ;IB=-40mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-2A ;IB=-4mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-4A ;IB=-40mA -3.5 V μA μA ICBO Collector cut-off current VCB=-50V; IE=0 VCE=-50V; RBE=∞ -10 ICEO Collector cut-off current -10 hFE DC current gain IC=-2A ; VCE=-3V 1000 20000 VD Diode forward voltage ID=4A 3.0 V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1389 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3