2SB1391

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1391 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -8 -12 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1391 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=-25mA; RBE=∞ IC=-100μA; IE=0 MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage -120 V V(BR)CBO Collector-base breakdown voltage -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-8mA B -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-8A ;IB=-80mA B -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-4A ;IB=-8mA B -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-8A ;IB=-80mA B -3.5 V μA μA ICBO Collector cut-off current VCB=-100V; IE=0 VCE=-100V; RBE=∞ -10 ICEO Collector cut-off current -10 hFE DC current gain IC=-4A ; VCE=-3V 1000 20000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1391 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3