2SB1392

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ -8 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= -50mA; RBE= ∞ IC= -10μA; IE= 0 IE= -10μA; IC= 0 MIN 2SB1392 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage -60 V V(BR)CBO Collector-Base Breakdown Voltage -70 V V(BR)EBO Emitter-Base Breakdown Voltage -5 V VCE(sat) VBE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.0 V Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.2 V Base-Emitter On Voltage IC= -1A; VCE= -4V -1.0 V μA μA Collector Cutoff Current VCB= -50V; IE= 0 VCE= -50V; RBE= ∞ -10 ICEO Collector Cutoff Current -10 hFE-1 DC Current Gain IC= -1A; VCE= -4V 60 200 hFE-2 DC Current Gain IC= -0.1A; VCE= -4V 35 hFE-1 Classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn 2