2SB1393

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Satisfactory linearity of hFE ・Low collector to emitter saturation voltage ・Complement to type 2SD1985/1985A APPLICATIONS ・For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SB1393 2SB1393A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB1393 VCBO Collector-base voltage 2SB1393A 2SB1393 VCEO Collector-emitter voltage 2SB1393A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base -80 -5 -3 -5 25 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB1393 IC=-30mA , IB=0 2SB1393A IC=-3A; IB=-0.375A VCE=-4V; IC=-3A 2SB1393 2SB1393A 2SB1393 2SB1393A VCE=-60V ;VBE=0 CONDITIONS 2SB1393 2SB1393A MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage ICES Collector cut-off current -200 VCE=-80V; VBE=0 VCE=-30V; IB=0 -300 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.1A; VCE=-5V;f=1MHz 70 10 20 -1.0 250 μA ICEO Collector cut-off current μA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-1A ;IB1=-0.1A IB2=0.1A;VCC=-50V 0.5 1.2 0.3 μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A 4