2SB1404

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1404 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ -6 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1404 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞ -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA B -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA B -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA B -2.0 V VBE(sat)-2 ICBO Base-Emitter Saturation Voltage IC= -3A; IB= -30mA B -3.5 V μA μA Collector Cutoff Current VCB= -100V; IE= 0 VCE= -100V; RBE= ∞ -10 ICEO Collector Cutoff Current -10 hFE DC Current Gain IC= -1.5A; VCE= -3V 1000 20000 isc Website：www.iscsemi.cn 2