2SB1419

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ -20 A 120 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1419 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -1.8 V VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-3 DC Current Gain IC= -8A; VCE= -5V 20 hFE-2 Classifications Q 60-120 S 80-160 P 100-200 isc Website：www.iscsemi.cn 2