2SB1470

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3.5 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -8 -15 120 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-7A ;IB=-7mA B 2SB1470 MIN -160 TYP. MAX UNIT V -3.0 -3.0 -100 -100 -100 1000 3500 20 20000 V V μA μA μA IC=-7A ;IB=-7mA B VCB=-160V; IE=0 VCE=-160V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-7A ;IB1=-IB2=-7mA VCC=-50V 1.0 1.5 1.2 μs μs μs hFE-2 classifications Q 3500-10000 S 7000-20000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1470 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3