2SB1481

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -6mA) ·Complement to Type 2SD2241 B APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature Storage Temperature 25 150 -55~150 ℃ ℃ VALUE -100 -100 -5 -4 -6 -0.3 2 W UNIT V V V A A A isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1481 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -100 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA B -1.5 V Base-Emitter Saturation Voltage IC= -3A; IB= -6mA B -2.0 V μA Collector Cutoff Current VCB= -100V; IE= 0 VEB= -5V; IC= 0 -2.0 Emitter Cutoff Current -2.5 mA hFE-1 DC Current Gain IC= -1.5A; VCE= -2V 2000 hFE-2 DC Current Gain IC= -3A; VCE= -2V 1000 VECF C-E Diode Forward Voltage IF= 1A 2.0 V Switching Times μs μs μs ton tstg tf Turn-on Time IC= -3A, IB1= -IB2= -6mA, VCC≈ -30V; RL= 10Ω 0.15 Storage Time 0.80 Fall Time 0.40 isc Website：www.iscsemi.cn 2