2SB1490

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1490 DESCRIPTION ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2250 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 80W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ -12 A 90 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -30mA; IB= 0 IC= -6A; IB= -6mA B 2SB1490 MIN -140 TYP. MAX UNIT V -2.5 -3.0 -100 -100 -100 2000 5000 20 30000 V V μA μA μA IC= -6A; IB= -6mA B VCB= -160V; IE= 0 VCE= -140V; IB= 0 VEB= -5V; IC= 0 IC= -1A; VCE= -5V IC= -6A; VCE= -5V IC= -0.5A; VCE= -10V MHz Switching Times Turn-on Time Storage Time Fall Time IC= -6A; IB1= -IB2= -6mA, VCC= -50V 1.0 1.5 1.2 μs μs μs ton tstg tf hFE-2 Classifications Q 5000-15000 P 8000-30000 isc Website：www.iscsemi.cn 2