2SB1507

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1507 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2280 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ -20 A 3 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1507 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1m A; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1m A; IC= 0 -6 V VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.4 V μA μA Collector Cutoff Current VCB= -40V; IE= 0 -100 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 hFE-1 DC Current Gain IC= -1A; VCE= -2V 70 280 hFE-2 DC Current Gain IC= -5A; VCE= -2V 30 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 10 MHz Switching Times μs μs μs ton Turn-on Time IC= -2A; RL= 10Ω, IB1= -IB2= -0.2A, VCC= -20V 0.2 tstg Storage Time 0.7 tf Fall Time 0.1 hFE-1 Classifications Q 70-140 R 100-200 S 140-280 isc Website：www.iscsemi.cn 2