2SB1530

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1530 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) ·Complement to Type 2SD2337 APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ -5 A 1.5 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1530 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ IE= -5mA; IC= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -3.0 V VBE(on) ICBO Base-Emitter On Voltage IC= -50mA; VCE= -4V -1.0 V μA Collector Cutoff Current VCB= -120V; IE= 0 -1 hFE-1 DC Current Gain IC= -50mA; VCE= -4V 60 200 hFE-2 DC Current Gain IC= -0.5A; VCE= -10V 60 hFE-1 Classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn 2