2SB1550

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1550 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -10 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA, IB=0 IC=-0.1mA, IE=0 IE=-2mA, IC=0 IC=-5A ,IB=-20mA B 2SB1550 MIN -80 -80 -5 TYP. MAX UNIT V V V -2.0 -2.5 -10 -2 1000 20000 V V μA mA IC=-5A ,IB=-20mA B VCB=-80V, IE=0 VEB=-5V, IC=0 IC=-5A ; VCE=-3V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1550 Fig.2 Outline dimensions 3